Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si „111) substrates
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منابع مشابه
Optical Characterization of Lateral Epitaxial Overgrown GaN Layers
The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatiallyresolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measur...
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Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnificat...
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